朱顺威，1994年1月生于浙江海宁，2016年从绍兴文理学院微电子学专业毕业后，在西安电子科技大学微电子学院攻读硕士、博士研究生，2023年6月获工学博士学位。主要研究方向为宽禁带功率半导体器件与电路应用。
发表论文
[1]Zhu S, Jia H, Yang Y. Improved Multi-Recessed p-Buffer 4H-SiC Metal-Semiconductor Field-Effect Transistor with High Power Added Efficiency[J]. Current Applied Physics, 2023, 49(3), 100-108.
[2]Zhu S, Jia H, Yang Y. A novel LDMOS with optimized electric field distribution to eliminate substrate assisted depletion effect[J]. Microelectronics Journal, 2022, 128: 105573.
[3]Zhu S, Jia H, Yang Y. Super Junction Lateral Double-Diffused MOSFET with Ultra-low Specific on-Resistance Completely Eliminating Substrate Assisted Depletion Effect[J]. Silicon, 2022, 15: 1443-1450.
[4]Zhu S, Jia H, Dong M, et al. Improved 4H-SiC Metal–Semiconductor Field-Effect Transistors with Double-Symmetric-Step Buried Oxide Layer for High-Energy-Efficiency Applications[J]. Journal of Electronic Materials, 2022, 51(8): 4348-4356.
[5]Zhu S, Jia H, Wang X, et al. Improved MRD 4H-SiC MESFET with high power added efficiency, Micromachines[J]. 2019, 10(7): 479.
[6]Zhu S, Jia H, Li T, et al. Novel high-energy-efficiency AlGaN/GaN HEMT with high gate and multi-recessed buffer[J]. Micromachines, 2019, 10(7): 444.
[7]Jia H, Zhu S, Hu M, et al. An improved DRBL AlGaN/GaN HEMT with high power added efficiency[J]. Materials Science in Semiconductor Processing, 2019, 89(1): 212-215.
