一、个人简介:
吴继宝,1991年11月出生于浙江丽水,西安电子科技大学 微电子学与固体电子学专业工学博士。
二、研究领域:
主要从事新型半导体材料和器件设计等方面研究
三、主讲课程：
《半导体物理》、《数字集成电路设计原理》等
四、主要研究成果
[1] Jibao Wu. Coverage-dependent Adsorption and Stability of Functionalized Ge(100) and (111) Surfaces[J]. Applied Surface Science, 2022, 572: 151466.
[2] Jibao Wu. Effects of strain on the electronic, optical, and ferroelectric transition properties of HfO2: ab initio simulation study[J]. Journal of Physics: Condensed Matter, 2021, 33(29): 295501.
[3] Jibao Wu et al. Impact of Oxygen Vacancies on Monoclinic Hafnium Oxide and Band Alignment with Semiconductors[J]. Materials Today Communications, 2020 25: 101482.
[4] Jibao Wu et al. Nonideality of Negative Capacitance Ge Field-Effect Transistors without Internal Metal Gate[J]. IEEE Electron Device Letters, 2018, 39(4): 614-617
[5] Jiuren Zhou, Jibao Wu, et al. Frequency Dependence of Performance in Ge Negative Capacitance PFETs Achieving Sub-30 mV/decade Swing and 110 mV Hysteresis at MHz[C]. IEEE International Electron Devices Meeting(IEDM), San Francisco, CA, USA, Dec. 2017, pp.373-376.(共同一作)
[6] Chengxu Wang, Jibao Wu et al. Effects of Temperature on the Performance of Hf0.5Zr0.5O2-based Negative Capacitance FETs[J]. IEEE Electron Device Letters, 2020, 41(11): 1625-1628.
[7] Yibo Wang, Jibao Wu et al. Interface Tuning of metal/β-Ga2O3 Schottky barrier diode by Post Thermal Annealing[C]. 2018 International Conference on Solid State Devices and Materials (SSDM2018), Hongo Campus, The University of Tokyo, September 9 - 13, 2018. (共同一作)
[8] Cizhe Fang; Yan Liu; Yibo Wang; Jibao Wu; Genquan Han; Yao Shao, et al. "Buffer-free GeSn with high relaxation degree grown on Si (001) substrate for photodetection." IEEE Photonics Journal 10.6 (2018): 1-9.
五、荣誉获奖
2024年度，绍兴文理学院优秀教师
六、指导学生
第八届全国大学生集成电路创新创业大赛 华东分赛区决赛一等奖，2024年，指导老师；
第八届全国大学生集成电路创新创业大赛 全国总决赛二等奖，2024年，指导老师；
